1 UD2401 p-ch 20v fast switching mosfets symbol parameter rating units v ds drain-source voltage -20 v v gs gate-sou r ce voltage 12 v i d @t c =25 continuous drain current, v gs @ -4.5v 1 -18.4 a i d @t c =100 continuous drain current, v gs @ -4.5v 1 -11.6 a i d @t a =25 continuous drain current, v gs @ -4.5v 1 -5.2 a i d @t a =70 continuous drain current, v gs @ -4.5v 1 -4.2 a i dm pulsed drain current 2 -50 a p d @t c =25 total power dissipation 3 25 w p d @t a =25 total power dissipation 3 2 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 62 /w r jc thermal resistance junction-case 1 --- 5 /w id -20v 52m ? -18.4a the UD2401 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD2401 meet the rohs and green product requirement , with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to252 pin configuration product summery bv dss r ds(on)
2 p-ch 20v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -20 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.014 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-15a --- 42 52 m v gs =-2.5v , i d =-10a --- 67 85 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -0.5 -0.8 -1.2 v v gs(th) v gs(th) temperature coefficient --- 3.95 --- mv/ i dss drain-source leakage current v ds =-16v , v gs =0v , t j =25 --- --- 1 ua v ds =-16v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 12v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-15a --- 16.4 --- s q g total gate charge (-4.5v) v ds =-15v , v gs =-4.5v , i d =-15a --- 11.1 15.5 nc q gs gate-source charge --- 2.67 3.7 q gd gate-drain charge --- 3.26 4.6 t d(on) turn-on delay time v dd =-10v , v gs =-4.5v , r g =3.3 , i d =-15a --- 5.2 10.4 ns t r rise time --- 12.8 23 t d(off) turn-off delay time --- 28.8 58 t f fall time --- 16 32 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 857 1200 pf c oss output capacitance --- 114 160 c rss reverse transfer capacitance --- 108 151 symbol parameter conditions min. typ. max. unit i s continuous source current 1,4 v g =v d =0v , force current --- --- -18.4 a i sm pulsed source current 2,4 --- --- -50 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1 v t rr reverse recovery time i f =-15a , di/dt=100a/s , t j =25 --- 11.6 --- ns q rr reverse recovery charge --- 2.6 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics UD2401
3 p-ch 20v fast switching mosfets 40 60 80 100 12345 -v gs (v) r dson (m ? ) -i d =10a 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD2401
4 p-ch 20v fast switching mosfets 10 100 1000 159131721 -v ds (v) c (pf) f=1.0mhz ciss coss crss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r jc ) p dm d = t on /t t j peak = t c + p dm x r jc t on t 0.01 0.05 0.1 0.2 duty=0.5 single pulse 0.02 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 gate charge waveform UD2401
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